Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering

Journal of Crystal Growth

Volumn 310, Issue 1, 2008, Pages 62-70

  Hartmann, J M ^a   Gonzatti, F ^a   Fillot, F ^a   Billon, T ^a  

^a CEA LETI   (France)

Author keywords

A1. Growth models; A3. Chemical vapor deposition processes; B1. Germanium silicon compounds

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); GERMANIUM; MATHEMATICAL MODELS; SEMICONDUCTOR GROWTH;

GERMANIUM SILICON COMPOUNDS; GROWTH MODELS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 36549022508     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.10.003     Document Type: Article

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