Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates

Journal of Crystal Growth

Volumn 280, Issue 3-4, 2005, Pages 530-538

  Jahan, C ^a   Faynot, O ^a   Tosti, L ^a   Hartmann, J M ^a  

^a CEA GRENOBLE   (France)

Author keywords

A1. H2 bake; A1. Si agglomeration; A3. Reduced pressure chemical vapor deposition; A3. Ultra thin SOI wafers

Indexed keywords

AGGLOMERATION; CHEMICAL VAPOR DEPOSITION; ETCHING; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; THERMOOXIDATION; ULTRATHIN FILMS;

AGGLOMERATION CONTROL; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SELECTIVE EPITAXIAL GROWTH (SEG); ULTRATHIN SOI FILMS;

EPITAXIAL GROWTH;

EID: 20444382382     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.088     Document Type: Article

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