Theoretical models for doping diamond for semiconductor applications

Physica Status Solidi (B) Basic Research

Volumn 245, Issue 9, 2008, Pages 1679-1700

  Goss, Jonathan P ^a   Eyre, R J ^a   Briddon, P R ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 54949102071     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200744115     Document Type: Review

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