Exceptionally high voltage Schottky diamond diodes and low boron doping

Semiconductor Science and Technology

Volumn 18, Issue 3, 2003, Pages

  Butler, J E ^a   Geis, M W ^b   Krohn, K E ^b   Lawless Jr , J ^b   Deneault, S ^b   Lyszczarz, T M ^b   Flechtner, D ^c   Wright, R ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c Diamond Microelectronics Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; DIAMOND FILMS; ELECTRIC POTENTIAL; ENERGY GAP; EPITAXIAL GROWTH; SEMICONDUCTING BORON; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

MICROWAVE PLASMA CHEMICAL VAPOUR DEPOSITION (MPCVD);

SCHOTTKY BARRIER DIODES;

EID: 0037340204     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/3/309     Document Type: Article

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