Boron implantation/in situ annealing procedure for optimal p-type properties of diamond

Applied Physics Letters

Volumn 68, Issue 16, 1996, Pages 2264-2266

  Fontaine, F ^a   Uzan Saguy, C ^a   Philosoph, B ^a   Kalish, R ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000703141     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115879     Document Type: Article

References (11)

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