n-type diamond with high room temperature electrical conductivity by deuteration of boron doped diamond layers

Diamond and Related Materials

Volumn 13, Issue 4-8, 2004, Pages 700-704

  Saguy, C ^a   Kalish, R ^a   Cytermann, C ^a   Teukam, Z ^b   Chevallier, J ^b   Jomard, F ^b   Tromson Carli, A ^b   Butler, J E ^c   Baron, C ^d   Deneuville, A ^d  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b Centre National de la Recherche Scientifique   (France)

^c NAVAL RESEARCH LABORATORY   (United States)

^d CNRS   (France)

Author keywords

Defect complexes; Doped diamond; Electrical properties

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; IONIZATION; THERMAL EFFECTS;

CONDUCTION BANDS; GROWTH DEFECTS; IONIZATION ENERGY;

DIAMONDS;

DIAMOND;

EID: 2442516289     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.11.066     Document Type: Article

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