n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 B, 1999, Pages

  Hasegawa, Masataka ^a   Takeuchi, Daisuke ^a   Yamanaka, Sadanori ^a   Ogura, Masahiko ^a   Watanabe, Hideyuki ^a,b   Kobayashi, Naoto ^a   Okushi, Hideyo ^a   Kajimura, Koji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING DIAMONDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SULFUR;

CAPACITANCE-VOLTAGE CHARACTERISTICS; HOMOEPITAXIAL GROWTH;

DIAMOND FILMS;

EID: 0033345746     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1519     Document Type: Article

References (16)