SCOPUS 정보 검색 플랫폼

Volumn 13, Issue 40, 2001, Pages 8901-8914

Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: Prediction versus experiment

(4) Katayama Yoshida, H a Nishimatsu, T b Yamamoto, T c Orita, N d

a OSAKA UNIVERSITY (Japan)

b TOHOKU UNIVERSITY (Japan)

c KOCHI UNIVERSITY OF TECHNOLOGY (Japan)

d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL GROWTH; DIAMONDS; ELECTRONIC STRUCTURE; ENERGY GAP; IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SOLUBILITY;

CODOPING; LOW RESISTIVITY WIDE BAND GAP SEMICONDUCTOR;

SEMICONDUCTOR DOPING;

EID: 0035828804 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/40/304 Document Type: Article

Times cited : (139)

References (35)

1
- 0002928721
- Private communications
- (1998)
- Akasaki, I.¹

2
- 5444237332
- (1972) J. Phys. C: Solid State Phys. , vol.5 , pp. 1629
- Von Barth, U.¹ Hedin, L.²

3
- 0030260130
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2707
- Brandt, O.¹ Yang, H.² Kostial, H.³ Ploog, K.H.⁴

4
- 4243606192
- (1985) Phys. Rev. Lett. , vol.55 , pp. 2471
- Car, R.¹ Parrinello, M.²

5
- 0000614061
- (1971) J. Phys. C: Solid State Phys. , vol.4 , pp. 3107
- Hedin, L.¹ Lundquist, B.I.²

7
- 0002936063
- Fabrication method of the low-resistivity p-type AIN
- (1998) Japanese Patent JP H10-208612
- Katayama-Yoshida, H.¹

8
- 0002999140
- unpublished
- (2001)
- Katayama-Yoshida, H.¹

9
- 0031513876
- (1997) Phys. Status Solidi B , vol.202 , pp. 763
- Katayama-Yoshida, H.¹ Yamamoto, T.²

10
- 0032269632
- (1998) Phys. Status Solidi B , vol.210 , pp. 429
- Katayama-Yoshida, H.¹ Nishimatsu, T.² Yamamoto, T.³ Orita, N.⁴

11
- 0003005260
- ed H Sakaki et al (Bristol: IOPP)
- (1999) Compound Semiconductors (Inst. Phys. Conf. Ser. 162) , pp. 747-756
- Katayama-Yoshida, H.¹ Yamamoto, T.² Nishimatsu, T.³

12
- 0003013282
- Fabrication method of the low resistivity p-type GaN
- (published in JP H10-101496)
- (1996) Japanese Patent JP H8-258054
- Katayama-Yoshida, H.¹

13
- 0002931313
- Fabrication method of the low resistivity n-type diamond
- (published in JP H10-247624)
- (1998) Japanese Patent JP H9-50106
- Katayama-Yoshida, H.¹

14
- 0002936065
- Fabrication method of the low resistivity n-type diamond
- (published in JP2000-26194)
- (1999) Japanese Patent JPH10-208611
- Katayama-Yoshida, H.¹

15
- 0042113153
- (1965) Phys. Rev. , vol.140
- Kohn, W.¹ Sham, L.J.²

16
- 0000456470
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1065
- Koizumi, S.¹ Kamo, M.² Sato, Y.³ Ozaki, H.⁴ Inuzuka, T.⁵

17
- 0003250123
- (2001) Appl. Phys. Lett. , vol.78 , pp. 222
- Korotkov, R.Y.¹ Gregie, J.M.² Wessels, B.W.³

18
- 0002936862
- (2001) Japan Society of Applied Physics Meeting (Tokyo, 28-31 March) 31-K-4
- Morishima, Y.¹ Arai, Y.² Kihara, M.³ Doi, T.⁴ Sakaguchi, H.⁵

19
- 0002926887
- Private communication
- (1998)
- Nakamura, S.¹

20
- 0002929805
- Fabrication method of the p-type nitride compound semiconductors and nitride semiconductor devices
- (published in JP H10-144960) and JP H8-313442 (published in JP H10-154829)
- (1996) Japanese Patent JP H8-296872
- Nakamura, S.¹

21
- 0007661679
- ed D Gershoni (Singapore: World Scientific)
- (1999) Proc. 24th Int. Conf. Physics of Semiconductors , pp. 201
- Nishimatsu, N.¹ Katayama-Yoshida, H.² Orita, N.³

22
- 4243876036
- to be published
- (2001) Physica B
- Nishimatsu, N.¹ Katayama-Yoshida, H.² Orita, N.³

23
- 0001659182
- (1997) Appl. Phys. Lett. , vol.71 , pp. 945
- Nishimori, T.¹ Nakano, A.K.² Sakamoto, H.³ Takakuwa, Y.⁴ Kono, S.⁵

24
- 0000933046
- (1984) Hyperfine Interactions , vol.18 , pp. 605
- Patterson, B.D.¹ Holzschuh, E.² Kundig, W.³ Meier, P.F.⁴ Odermatt, W.⁵ Sellschop, J.P.F.⁶ Stemmet, M.C.⁷

25
- 75149141350
- (1998) J. Vac. Sci. Technol. A , vol.16 , pp. 1609
- Ploog, K.H.¹ Brandt, O.²

26
- 0001628558
- (1999) Phys. Rev. B , vol.60
- Sakaguchi, I.¹ Gamo, M.N.² Kikuchi, Y.³ Yasu, E.⁴ Haneda, H.⁵ Suzuki, T.⁶ Ando, T.⁷

27
- 4243514471
- (1991) Phys. Rev. B , vol.43 , pp. 199
- Troullier, N.¹ Martins, J.L.²

28
- 0000071489
- (1979) Phys. Rev. B , vol.19 , pp. 6094
- Williams, A.R.¹ Kuebler, J.² Gelatt, C.D.³

29
- 0031069368
- (1997) Japan. J. Appl. Phys. , vol.36
- Yamamoto, T.¹ Katayama-Yoshida, H.²

30
- 3743103808
- (1997) Mater. Sci. Forum , vol.258-263 , pp. 1185
- Yamamoto, T.¹ Katayama-Yoshida, H.²

31
- 0030688770
- ed C R Abernathy, H Amano and J C Zopler
- (1997) Gallium Nitride and Related Materials II (Pittsburgh, Pennsylvania 1997) (Mater. Res. Soc. Proc. Vol 468) , pp. 105
- Yamamoto, T.¹ Katayama-Yoshida, H.²

32
- 0032094262
- (1998) J. Cryst. Growth , vol.189-190 , pp. 532
- Yamamoto, T.¹ Katayama-Yoshida, H.²

33
- 0033322584
- (1999) Physica B , vol.273-274 , pp. 113
- Yamamoto, T.¹ Katayama-Yoshida, H.²

34
- 0002926893
- to be published
- (2001) Japan. J. Appl. Phys.
- Yamamoto, T.¹ Katayama-Yoshida, H.²

35
- 0035329206
- (2001) Japan. J. Appl. Phys. , vol.40
- Zohta, Y.¹ Iwasaki, Y.² Nakamura, S.³ Mukai, T.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.