1/f noise in semiconducting and just-metallic boron-implanted diamond

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 11, 2005, Pages

  Wu, J ^a   Tshepe, T ^a   Butler, J E ^b   Hoch, M J R ^a  

^a UNIVERSITY OF THE WITWATERSRAND   (South Africa)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIAMOND;

ANALYTIC METHOD; ARTICLE; CONCENTRATION (PARAMETERS); CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; SIGNAL NOISE RATIO; SURFACE PROPERTY; TEMPERATURE DEPENDENCE;

EID: 20044375455     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.113108     Document Type: Article

References (16)

1. The Physics of Diamond, edited by A. Paoletti and A. Tucciarone (IOS Press, Amsterdam, 1997), pp. 273, 411.
2. The Properties of Natural and Synthetic Diamond, edited by J. E. Field (Academic Press, New York, 1992), p. 301.
3. T. Tshepe, C. Kasl, J. F. Prins, and M. J. R. Hoch, Phys. Rev. B 70, 245107 (2004);
4. T. Tshepe, J. F. Prins, and M. J. R. Hoch, Czech. J. Phys. 46, 2439 (1996).
5. P. Dutta and P. M. Horn, Rev. Mod. Phys. 53, 497 (1981).
6. M. B. Weissman, Rev. Mod. Phys. 60, 537 (1988).
7. I. Shlimak, Y. Kraftmakher, R. Ussyshkin, and K. Zilberberg, Solid State Commun. 93, 829 (1995).
8. J. G. Massey and M. Lee, Phys. Rev. Lett. 79, 3986 (1997).
9. J. F. Prins, Phys. Rev. B 38, 5576 (1988).
10. C. Leemann, M. J. Skove, and E. P. Stillwell, Solid State Commun. 35, 97 (1980).
11. N. F. Mott, The Metal-Insulator Transition (Taylor and Francis, London, 1990).
12. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
13. F. N. Hooge, Phys. Lett. 29A, 139 (1969).
14. V. I. Kosub, Solid State Commun. 97, 843 (1996).
15. O. Cohen, Z. Ovadyahu, and M. Rokni, Phys. Rev. Lett. 69, 3555 (1992).
16. P. Dutta, P. Dimon, and P. M. Horn, Phys. Rev. Lett. 43, 646 (1979).