Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition

Thin Solid Films

Volumn 382, Issue 1-2, 2001, Pages 113-123

  Nishitani Gamo, Mikka ^a,b   Xiao, Changyong ^a   Zhang, Yafei ^a   Yasu, Eiji ^a,c   Kikuchi, Yuko ^a   Sakaguchi, Isao ^a   Suzuki, Toshimitsu ^a,d   Sato, Yoichiro ^a   Ando, Toshihiro ^a,d  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c KUBOTA CORPORATION   (Japan)

^d KANSAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; HALL EFFECT; HYDROGEN SULFIDE; MICROWAVES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SULFUR;

HOMOEPITAXY;

SYNTHETIC DIAMONDS;

EID: 0034817944     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01770-3     Document Type: Article

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