Conversion of p-type to n-type diamond by exposure to a deuterium plasma

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7060-7065

  Kalish, R ^a   Saguy, C ^a   Cytermann, C ^a   Chevallier, J ^b   Teukam, Z ^b   Jomard, F ^b   Kociniewski, T ^b   Ballutaud, D ^b   Butler, J E ^c   Baron, C ^d   Deneuville, A ^d  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b Centre National de la Recherche Scientifique   (France)

^c NAVAL RESEARCH LABORATORY   (United States)

^d LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEUTERIUM PLASMAS; EPITAXIAL LAYERS; MICROWAVE PLASMAS; ROOM TEMPERATURE;

DEUTERIUM; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS;

DIAMONDS;

EID: 19944372372     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1811777     Document Type: Article

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