Origin of the metallic properties of heavily boron-doped superconducting diamond

Nature

Volumn 438, Issue 7068, 2005, Pages 647-650

  Yokoya, T ^a,b   Nakamura, T ^a   Matsushita, T ^a   Muro, T ^a   Takano, Y ^c   Nagao, M ^c   Takenouchi, T ^d   Kawarada, H ^d   Oguchi, T ^e  

^a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^b OKAYAMA UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d WASEDA UNIVERSITY   (Japan)

^e HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METAL INSULATOR TRANSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SUPERCONDUCTING MATERIALS;

DIAMOND BAND; DOPING CONCENTRATION; INSULATOR-TO-METAL TRANSITION;

METALLIC COMPOUNDS;

BORON; DIAMOND;

BORON; DIAMOND; SUPERCONDUCTIVITY;

ARTICLE; CONDUCTANCE; ELECTRONICS; INSULATOR ELEMENT; MEMBRANE TRANSPORT; PRIORITY JOURNAL; SEMICONDUCTOR; SUPERCONDUCTOR;

EID: 28444462946     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature04278     Document Type: Article

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