Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Trajkov, E ^a   Prawer, S ^a   Butler, J E ^b   Hearne, S M ^a  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAP LEVEL; POLICRYSTALLINE DIAMOND FILMS; THERMALLY STIMULATED CONDUCTIVITY (TSC); ULTRAVIOLET DOSIMETRY;

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); DOSIMETERS; DOSIMETRY; ELECTRIC CONDUCTIVITY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING DIAMONDS; SULFUR; ULTRAVIOLET DEVICES; ULTRAVIOLET RADIATION;

DIAMONDS;

EID: 23844543419     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1984079     Document Type: Article

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