Efficient free-exciton recombination emission from diamond diode at room temperature

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages

  Horiuchi, K ^a   Kawamura, A ^a   Ide, T ^a   Ishikura, T ^a   Nakamura, K ^a   Yamashita, S ^a  

^a TOKYO GAS CO LTD   (Japan)

Author keywords

Diamond; Electroluminescence; Free exciton; Light emitting diode; n type conductivity; Sulfur doping; UV

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIAMONDS; ELECTRON EMISSION; EXCITONS; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

RECOMBINATION EMISSIONS; RECTIFICATION CHARACTERISTICS;

SEMICONDUCTOR DIODES;

EID: 0035867586     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l275     Document Type: Article

References (23)