P-type doping by B ion implantation into diamond at elevated temperatures

Diamond and Related Materials

Volumn 15, Issue 1, 2006, Pages 157-159

  Tsubouchi, Nobuteru ^a   Ogura, M ^a   Kato, H ^a   Ri, S G ^a   Watanabe, H ^a   Horino, Y ^a   Okushi, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

B ion implantation; Hall mobility; Homoepitaxial diamond film; HPHT synthetic IIa

Indexed keywords

DIAMOND FILMS; DOPING (ADDITIVES); EPITAXIAL GROWTH; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; SUBSTRATES; TEMPERATURE;

B ION IMPLANTATION; HALL MOBILITY; HOMOEPITAXIAL DIAMOND FILMS; HPHT SYNTHETIC IIA;

DIAMONDS;

EID: 29144524008     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.09.008     Document Type: Article

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