Ab initio study of donor-hydrogen complexes for low-resistivity n-type diamond semiconductor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 1952-1962

  Nishimatsu, Takeshi ^a,b,c   Katayama Yoshida, Hiroshi ^a,b   Orita, Nozomi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

C omplex; Diamond; Donor; Hydrogen; Impurity; n type; Phosphorus; Semiconductor; Sulfur

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; GRADIENT METHODS; HYDROGEN; IMPURITIES; LATTICE VIBRATIONS; MOLECULAR DYNAMICS; PHOSPHORUS; SULFUR; THERMAL CONDUCTIVITY;

ATOMIC CONFIGURATIONS; COHESIVE ENERGY; DONOR HYDROGEN COMPLEXES; DONOR IMPURITIES; INFRARED ABSORPTION; INFRARED ACTIVE HYDROGEN VIBRATION; INTERSTITIAL SITE; JOHN TELLER DISTORTIONS; LOCAL DENSITY APPROXIMATION;

SEMICONDUCTING DIAMONDS;

EID: 0036529511     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1952     Document Type: Article

References (31)