High carrier mobility in single-crystal plasma-deposited diamond

Science

Volumn 297, Issue 5587, 2002, Pages 1670-1672

  Isberg, Jan ^a   Hammersberg, Johan ^a   Johansson, Erik ^a   Wikström, Tobias ^a   Twitchen, Daniel J ^a   Whitehead, Andrew J ^a   Coe, Steven E ^a   Scarsbrook, Geoffrey A ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMONDS; SEMICONDUCTOR DIODES; SINGLE CRYSTALS;

PLASMA DEPOSITED DIAMOND;

CARRIER MOBILITY;

DIAMOND;

DIAMOND; ELECTRONIC EQUIPMENT;

ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRON; ELECTRONICS; MEASUREMENT; PRIORITY JOURNAL; PURIFICATION; REPRODUCIBILITY; ROOM TEMPERATURE;

EID: 0037031719     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1074374     Document Type: Article

References (21)