Passivation of boron in diamond by deuterium

Applied Physics Letters

Volumn 74, Issue 13, 1999, Pages 1875-1876

  Zeisel, R ^a   Nebel, C E ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DEUTERIUM; MATHEMATICAL MODELS; PASSIVATION;

CAPACITANCE-VOLTAGE CHARACTERISTICS; DEUTERATION; ELECTRICAL PASSIVATION;

SYNTHETIC DIAMONDS;

EID: 0032620598     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123698     Document Type: Article

References (5)

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2. W. Mönch, Europhys. Lett. 27, 479 (1994).
3. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
4. Hydrogen in Semiconductors, edited by M. Stutzmann and J. Chevallier (North-Holland, Amsterdam, 1990).
5. C. P. Herrero, M. Stutzmann, A. Breitschwerdt, and P. V. Santos, Phys. Rev. B 41, 1054 (1990).