N-type conductivity in high-fluence Si-implanted diamond

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Weishart, H ^a   Heera, V ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CONCENTRATIONS; ENERGY BARRIERS; FLUENCES; TEMPERATURE DEPENDENCE;

ANNEALING; CHEMICAL BONDS; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ENERGY GAP; HALL EFFECT; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON CARBIDE;

NANOSTRUCTURED MATERIALS;

EID: 21044452499     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1898448     Document Type: Article

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