Electrical properties of lithium-implanted layers on synthetic diamond

Diamond and Related Materials

Volumn 5, Issue 6-8, 1996, Pages 757-760

  Job, R ^a   Werner, M ^b   Denisenko, A ^a   Zaitsev, A ^a   Fahrner, W R ^a  

^a UNIVERSITY OF HAGEN   (Germany)

^b VDI/VDE Technologiezentrum I GmbH   (Germany)

Author keywords

High temperature ion implantation; Lithium doping; n type conductivity

Indexed keywords

EID: 0001169752     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(95)00458-0     Document Type: Article

References (10)

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