Shallow donor state due to nitrogen-hydrogen complex in diamond

Physical Review Letters

Volumn 88, Issue 6, 2002, Pages 66402/1-66402/4

  Miyazaki, Takehide ^a   Okushi, Hideyo ^a   Uda, Tsuyoshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGEN; NITROGEN; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING;

DOPANT; SHALLOW DONOR; WIDE BAND GAP SEMICONDUCTOR;

SEMICONDUCTING DIAMONDS;

EID: 0037060403     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.88.066402     Document Type: Article

References (60)