GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1843-1846

  Chen, Lung Chien ^a   Hsu, Chin Yuan ^b   Lan, Wen How ^c   Teng, Sheng Yuan ^d  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^d Formosa Epitaxy Incorporation No 99   (Taiwan)

Author keywords

GaN; Light emitting diode; Ni AuBe

Indexed keywords

GOLD COMPOUNDS; HEAT TREATMENT; NICKEL; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS;

FORWARD-BIAS VOLTAGE;

LIGHT EMITTING DIODES;

EID: 0042593178     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00129-1     Document Type: Conference Paper

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