The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy

Vacuum

Volumn 74, Issue 1, 2004, Pages 45-53

  Karatas S ^a   Turut A ^b  

^a KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Admittance spectroscopy; Interface states; Schottky barrier diodes; Schottky barrier height; Series resistance; Si

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; FREQUENCIES; HYDROGEN; METALLIZING; SILICON; SPECTROSCOPIC ANALYSIS; ZINC;

ADMITTANCE SPECTROSCOPY; INTERFACE STATES; SCHOTTKY BARRIER HEIGHT; SERIES RESISTANCE;

SCHOTTKY BARRIER DIODES;

EID: 1942455930     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2003.11.006     Document Type: Article

References (35)

1. Liang G.R., Cui T.H., Varahramyan K. Microelectron Eng. 65:2003;279 Liang G.R., Cui T.H., Varahramyan K. Solid State Electron. 47:2003;691.
2. Liang G.R., Cui T.H., Varahramyan K. Microelectron Eng. 65:2003;279 Liang G.R., Cui T.H., Varahramyan K. Solid State Electron. 47:2003;691.
3. Sze SM. Physics of semiconductor devices, 2nd ed., New York: Willey; 1981. p. 245.
4. Horvath Z.J., Adam M., Godio P., Borionetti G., Szabo I., Gombia E., Van Tuyen V. Solid State Phen. 82-84:2002;255 Horváth Zs.J., Ádám M., Szabó I., Serényi M., Van Tuyen V. Appl Surf Sci, 190:2002;441.
5. Horvath Z.J., Adam M., Godio P., Borionetti G., Szabo I., Gombia E., Van Tuyen V. Solid State Phen. 82-84:2002;255 Horváth Zs.J., Ádám M., Szabó I., Serényi M., Van Tuyen V. Appl Surf Sci, 190:2002;441.
6. Liu Y.J., Yu H.Z. Chem Phys Chem. 3:2002;799 Liu Y.J., Yu H.Z. Chem Phys Chem. 4:2003;335.
7. Liu Y.J., Yu H.Z. Chem Phys Chem. 3:2002;799 Liu Y.J., Yu H.Z. Chem Phys Chem. 4:2003;335.
8. Hanselaer P.L., Laflére W.H., Van Meirhaeghe R.L., Cardon F. J Appl Phys. 56:1984;2309 Hanselaer P.L., Laflére W.H., Van Meirhaeghe R.L., Cardon F. Appl Phys A. 39:1986;129.
9. Hanselaer P.L., Laflére W.H., Van Meirhaeghe R.L., Cardon F. J Appl Phys. 56:1984;2309 Hanselaer P.L., Laflére W.H., Van Meirhaeghe R.L., Cardon F. Appl Phys A. 39:1986;129.
10. Türüt A., Yalçin N., Saglam M. Solid-State Electron. 35:1992;835.
11. Ho P.S., Yang E.S., Evans H.L., Wu X. Phys Rev Lett. 56:1986;177.
12. Ayyildiz E., Nuhoǧlu Ç., Turut A. Electron Mater. 31:2002;119-123.
13. Ayyildỳz E., Nuhoǧlu Ç., Saǧlam M., Türüt A. Int J Manuf Sci Prod. 2:1999;145.
14. Chattopadhyay P., RayChaudhuri B. Solid-State Electron. 36:1993;605.
15. Ouennoughi Z., Sellai A. Int J Electron. 83:1997;571.
16. Cova P.J., Singh A., Masut R.A. J Appl Phys. 82:1997;5217.
17. Çakar M., Onganer Y., Türüt A. Synth Met. 126:2002;213.
18. Nicollian E.H., Goetzberger A. Bell Syst Tech J. 46:1967;1055.
19. Korošak D., Cvikl B. Vacuum. 71:2003;123.
20. Werner J.H., Ploog K., Queisser H.J. Phys Rev Lett. 57:1986;1080.
21. Werner JH, Metallization and metal-semiconductor interfaces, New York: Plenum; 1989. p. 235.
22. Bati B., Nuhoǧlu Ç., Saǧlam M., Ayyildiz E., Türüt A. Phys Scr. 61:2000;209.
23. Grundner M., Jacob H. Appl Phys A. 39:1986;73.
24. Gräf D., Grundner M., Schulz R., Mühlhoff L. J Appl Phys. 68:1990;5155.
25. Pietsch G.J., Köhler U., Henzler M. J Appl Phys. 73:1993;4797.
26. Kampen T.U., Mönch W. Surf Sci. 490:1995;331-333.
27. Mönch W. Semiconductor surfaces and interfaces. 3rd ed:2001;Springer, Berlin.
28. de Nijs J.M.M., Druijf K.G., Afanas'ev V.V., van der Drift E., Balk P. Appl Phys Lett. 65:1994;2428.
29. Pardo R.S., Perez R., Vidal F.J.G., Whittle R., Flores F. Surf Sci. 426:1999;26.
30. Rhoderick E.H., Williams R.H. Metal-semiconductor contacts. 2nd ed:1988;Clarendon, Oxford.
31. Cheung S.K., Cheung N.W. Appl Phys Lett. 49:1986;85.
32. Werner J.H. Appl Phys A. 47:1988;291.
33. Sullivan J.P., Tung R.T., Pinto M.R., Graham W.R. J Appl Phys. 70:1991;7403.
34. Werner J.H., Güttler H.H. J Appl Phys. 69:1991;1522.
35. Mönch W. Phys Rev B. 37:1988;7129.