Investigation of IrO2 and RuO2 Schottky contacts on AlGaN/GaN heterostructure

Journal of Applied Physics

Volumn 95, Issue 2, 2004, Pages 698-704

  Jeon, Chang Min ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CURRENT DENSITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; IRIDIUM COMPOUNDS; LEAKAGE CURRENTS; MICROSTRUCTURE; OXIDATION; RUTHENIUM COMPOUNDS; SCHOTTKY BARRIER DIODES; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); SCHOTTKY BARRIER HEIGHT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0742320697     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1627454     Document Type: Article

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