Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

Semiconductor Science and Technology

Volumn 18, Issue 1, 2003, Pages 56-59

  Konofaos, N ^a   Evangelou, E K ^b  

^a UNIVERSITY OF PATRAS   (Greece)

^b LABORATORIO MDM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; METALLIZING; MOS DEVICES; OPTICAL DEVICES; SILICON;

POST-DEPOSITION ANNEALING;

SEMICONDUCTING FILMS;

EID: 0037231067     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/1/308     Document Type: Article

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