A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics

Semiconductor Science and Technology

Volumn 18, Issue 2, 2003, Pages 82-87

  Kwa, K S K ^a   Chattopadhyay, S ^a   Jankovic, N D ^b   Olsen, S H ^a   Driscoll, L S ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF NI   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL;

INTRINSIC-OXIDE CAPACITANCE;

MOS CAPACITORS;

EID: 0037320050     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/2/303     Document Type: Article

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