Simulation of the electrical characteristics of AlGaN/GaN heterojunction bipolar transistors

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 253-257

  Lambert, D J H ^a   Lin, D E ^a   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; EMITTER COUPLED LOGIC CIRCUITS; FREQUENCY RESPONSE; HIGH FREQUENCY AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TWO DIMENSIONAL;

SATURATION CURRENT; VOLTAGE BREAKDOWN; VOLTAGE EMITTER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034140093     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00231-2     Document Type: Article

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