Development of an ultrafast on-the-fly IDLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2614-2622

  Maheta, Vrajesh D ^a   Kumar, E Naresh ^a,b   Purawat, Shweta ^a,c   Olsen, Christopher ^d   Ahmed, Khaled ^d   Mahapatra, Souvik ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c INTEL TECHNOLOGY INDIA PVT LTD   (India)

^d APPLIED MATERIALS INC   (United States)

Author keywords

Field acceleration; Negative bias temperature instability (NBTI); P MOSFET; Plasma oxynitride; Safe operating voltage; Temperature activation; Thermal oxynitride; Time exponents

Indexed keywords

FIELD ACCELERATION; NEGATIVE-BIAS TEMPERATURE INSTABILITY (NBTI); P-MOSFET; PLASMA OXYNITRIDE; SAFE-OPERATING VOLTAGE; TEMPERATURE ACTIVATION; THERMAL OXYNITRIDE; TIME EXPONENTS;

DRAIN CURRENT;

EID: 53649103690     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003224     Document Type: Article

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