Interface effects in spin-polarized metal/insulator layered structures

Surface Science Reports

Volumn 63, Issue 9, 2008, Pages 400-425

  Velev, J P ^a   Dowben, P A ^a   Tsymbal, E Y ^a   Jenkins, S J ^b   Caruso, A N ^c  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF MISSOURI KANSAS CITY   (United States)

Author keywords

Interface states; Magnetic tunnel junctions; Multiferroics; Spin polarization

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SPIN DYNAMICS; STOICHIOMETRY; TUNNEL JUNCTIONS;

BULK PROPERTIES; ELECTRONIC TRANSPORTS; HETEROSTRUCTURE INTERFACES; HETEROSTRUCTURES; INTERFACE EFFECTS; INTERFACE ELECTRONIC STRUCTURE; INTERFACE STATES; LATTICE STRUCTURES; LAYERED STRUCTURED; MAGNETIC TUNNEL JUNCTIONS; MULTIFERROICS; SPIN POLARIZATION; SPIN POLARIZED; THIN-FILM DEPOSITIONS;

HETEROJUNCTIONS;

EID: 49849092879     PISSN: 01675729     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfrep.2008.06.002     Document Type: Review

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