Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: Possibility of intrinsic doping

Physical Review Letters

Volumn 98, Issue 19, 2007, Pages

  Siemons, Wolter ^a,b   Koster, Gertjan ^a   Yamamoto, Hideki ^a,c   Harrison, Walter A ^a   Lucovsky, Gerald ^d   Geballe, Theodore H ^a   Blank, Dave H A ^b   Beasley, Malcolm R ^a  

^a STANFORD UNIVERSITY   (United States)

^b UNIVERSITY OF TWENTE   (Netherlands)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE DENSITY; ELECTRON MOBILITY; INTERFACES (MATERIALS); PERMITTIVITY; PULSED LASER DEPOSITION; STRONTIUM COMPOUNDS;

CARRIER REDISTRIBUTION; EXTRINSIC DEFECTS; OXYGEN-ANNEALING;

LANTHANUM COMPOUNDS;

EID: 34547277540     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.196802     Document Type: Article

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