Interface structure and magnetism of magnetic tunnel junctions with a Co2MnSi electrode

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 2, 2004, Pages

  Schmalhorst, J ^a   Kammerer S ^a   Sacher, M ^a   Reiss, G ^a   Hutten A ^a   Scholl, A ^b  

^a BIELEFELD UNIVERSITY   (Germany)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; FERROMAGNETIC MATERIAL; MANGANESE; SILICON;

ABSORPTION SPECTROPHOTOMETRY; ARTICLE; ELECTRODE; MAGNETISM; OXIDATION; STRUCTURE ANALYSIS; TEMPERATURE DEPENDENCE; X RAY ANALYSIS;

EID: 37649030879     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.024426     Document Type: Article

References (37)

1. J. Daughton, J. Appl. Phys. 81, 3758 (1997).
2. M. Tsunoda, K. Nishikawa, S. Ogata, and M. Takahashi, Appl. Phys. Lett. 80, 3135 (2002).
3. R. K. de Groot, F. M. Mueller, P. G. van Engen, and K. H. J. Buschow, Phys. Rev. Lett. 50, 2024 (1983).
4. S. Ishida, T. Masaki, S. Fujii, and S. Asano, Physica B 245, 1 (1998).
5. S. Kämmerer, S. Heitmann, D. Meyners, D. Sudfeld, A. Thomas, A. Hütten, and G. Reiss, J. Appl. Phys. 93, 7945 (2003).
6. S. Kämmerer, A. Thomas, A. Hütten, and G. Reiss, Appl. Phys. Lett. 85, 79 (2004),
7. D. Briggs and M. P. Seah, Practical Surface Analysis (Wiley, New York, 1990), Chap. 5.
8. j), O1/0.212, Al2/0.105, Mn2/0.161, Co1/0.226 and Si2/0.071.
9. J. Schmalhorst and G. Reiss, Phys. Rev. B 68, 224437 (2003).
10. W. F. Brinkman, R. C. Dynes, and J. M. Rowell, J. Appl. Phys. 41, 1915 (1970).
11. M. Julliere, Phys. Lett. 54A, 225 (1975).
12. A. Thomas, Ph.D. thesis, University of Bielefeld, Germany, 2004.
13. P. LeClair, Ph.D. thesis, Eindhoven University of Technology, Netherlands, 2002.
14. S. Picozzi, A. Continenza, and A. J. Freeman, Phys. Rev. B 69, 094423 (2004).
15. C. J. Powell and A. Jablonski, NIST Electron Effective-Attenuation-Length Database, Version 1.0 (National Institute of Standards and Technology, Gaithersberg, MD, 2001).
16. G=8 eV, emission angle φ=42°.
17. 3 thickness of 1.8 nm as a result of an optimum oxidization of only the 1.4 nm thick metallic Al layer (Ref. 36).
18. J. A. Dean, Langes Handbook of Chemistry, Table 9-1 (McGraw-Hill, New York, 1973).
19. T. J. Regan, H. Ohldag, C. Stamm, F. Nolting, J. Lüning, J. Stöhr, and R. L. White, Phys. Rev. B 64, 214422 (2001).
20. Y. Yonamoto, T. Yokoyama, K. Amemiya, D. Matsumura, and T. Ohta, Phys. Rev. B 63, 214406 (2001).
21. B. T. Thole, R. D. Cowan, G. A. Sawatzky, J. Fink, and J. C. Fuggle, Phys. Rev. B 31, 6856 (1985).
22. x multiplet for the samples discussed in this work is not a result of a limited energy resolution in XAS.
23. X-Ray Absorption: Principles, Applications, Techniques of EXAFS, SEXAFS and XANES, in Chemical Analysis 92, edited by D. C. Koningsberger and R. Prins (Wiley, New York, 1988).
24. C. T. Chen, Y. U. Idzerda, H.-J. Lin, N. V. Smith, G. Meigs, E. Chaban, G. H. Ho, E. Pellegrin, and F. Sette, Phys. Rev. Lett. 75, 152 (1995).
25. H. A. Dürr, G. van der Laan, D. Spanke, F. U. Hillebrecht, and N. B. Brookes, Phys. Rev. B 56, 8156 (1997).
26. R. Nakajima, J. Stöhr, and Y. U. Idzerda, Phys. Rev. B 59, 6421 (1999).
27. V. Chakarian, Y. U. Idzerda, and C. T. Chen, Phys. Rev. B 57, 5312 (1998).
28. R. Wu and A. J. Freeman, Phys. Rev. Lett. 73, 1994 (1994).
29. I. Galanakis (private communication): the given numbers of 3d holes based on the work of Galanakis et al. (Ref. 31).
30. E. Göring (private communication).
31. I. Galanakis, P. H. Dederichs, and N. Papanikolaou, Phys. Rev. B 66, 174429 (2002).
32. B for Mn and 0.001 for Si.
33. A. M. Bratkovsky, Appl. Phys. Lett. 72, 2334 (1998).
34. R. Jansen and J. S. Moodera, Phys. Rev. B 61, 9047 (2000).
35. C. H. Shang, J. Nowak, R. Jansen, and J. S. Moodera, Phys. Rev. B 58, R2917 (1998).
36. R. Jansen and J. S. Moodera, Appl. Phys. Lett. 75, 400 (1999).
37. P. Mavropoulos, K. Sato, R. Zeller, P. H. Dederichs, V. Popescu, and H. Ebert, Phys. Rev. B 69, 054424 (2004).