High mobility in LaAlO3/SrTiO3 heterostructures: Origin, dimensionality, and perspectives

Physical Review Letters

Volumn 98, Issue 21, 2007, Pages

  Herranz, G ^a   Basletic M ^a,b   Bibes, M ^a   Carretero C ^a   Tafra, E ^b   Jacquet, E ^a   Bouzehouane, K ^a   Deranlot, C ^a   Hamzic A ^b   Broto, J M ^c   Barthelemy A ^a   Fert, A ^a  

^a CNRS   (France)

^b UNIVERSITY OF ZAGREB   (Croatia)

^c UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; LANTHANUM COMPOUNDS; OXYGEN VACANCIES; SUBSTRATES; TITANIUM OXIDES;

HIGH-MOBILITY CONDUCTION; LOW DEPOSITION OXYGEN PRESSURES; NONMETALLIC BEHAVIOR; OXIDE ELECTRONICS;

HETEROJUNCTIONS;

EID: 34547298118     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.216803     Document Type: Article

References (22)

1. S.B. Ogale, Thin Films and Heterostructures for Oxide Electronics (Springer Verlag, Berlin, 2005).
2. A. Ohtomo and H.Y. Hwang, Nature (London) NATUAS 0028-0836 427, 423 (2004). 10.1038/nature02308
3. H.Y. Hwang, A. Ohtomo, N. Nakagawa, D. Muller, and J. Grazul, Physica (Amsterdam) 22E, 712 (2004). PELNFM 1386-9477 10.1016/j.physe.2003.12.106
4. W. Siemons, Phys. Rev. Lett. PRLTAO 0031-9007 98, 196802 (2007). 10.1103/PhysRevLett.98.196802
5. M. Huijben, Nat. Mater. 5, 556 (2006). 1476-1122 10.1038/nmat1675
6. S. Thiel, G. Hammerl, A. Schmehl, C.W. Schneider, and J. Mannhart, Science 313, 1942 (2006). SCIEAS 0036-8075 10.1126/science.1131091
7. C.W. Schneider, S. Thiel, G. Hammerl, C. Richter, and J. Mannhart, Appl. Phys. Lett. 89, 122101 (2006). APPLAB 0003-6951 10.1063/1.2354422
8. N. Nakagawa, H.Y. Hwang, and D.A. Muller, Nat. Mater. 5, 204 (2006). 1476-1122 10.1038/nmat1569
9. G. Herranz, Phys. Rev. B PRBMDO 0163-1829 73, 064403 (2006). 10.1103/PhysRevB.73.064403
10. A. Ohtomo and H. Hwang, arXiv:cond-mat/0604117.
11. J.-L. Maurice, Phys. Status Solidi B PSSBBD 0370-1972 203, 2145 (2006). 10.1002/pssa.200690015
12. O.N. Tufte and P.W. Chapman, Phys. Rev. 155, 796 (1967). PHRVAO 0031-899X 10.1103/PhysRev.155.796
13. H.P.R. Frederikse and W.R. Hosler, Phys. Rev. 161, 822 (1967). PHRVAO 0031-899X 10.1103/PhysRev.161.822
14. C. Lee, J. Yahia, and J.L. Brebner, Phys. Rev. B PLRBAQ 0556-2805 3, 2525 (1971). 10.1103/PhysRevB.3.2525
15. H.P.R. Frederikse, W.R. Thurber, and W.R. Hosler, Phys. Rev. 134, A442 (1964). PHRVAO 0031-899X 10.1103/PhysRev.134.A442
16. D. Olaya, F. Pan, C.T. Rogers, and J.C. Price, Appl. Phys. Lett. 80, 2928 (2002). APPLAB 0003-6951 10.1063/1.1470694
17. A.S. Kalabukhov, Phys. Rev. B PRBMDO 0163-1829 75, 121404(R) (2007). 10.1103/PhysRevB.75.121404
18. M. Leonhardt, R.D. Souza, J. Claus, and J. Maier, J. Electrochem. Soc. JESOAN 0013-4651 149, J19 (2002). 10.1149/1.1430723
19. T. Ishigaki, S. Yamauchi, K. Kishio, J. Mizusaki, and K. Fueki, J. Solid State Chem. 73, 179 (1988). JSSCBI 0022-4596 10.1016/0022-4596(88)90067-9
20. M.N. Alexander and D.F. Holcomb, Rev. Mod. Phys. RMPHAT 0034-6861 40, 815 (1968). 10.1103/RevModPhys.40.815
21. G. Herranz, Phys. Rev. Lett. 96, 027207 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.96.027207
22. H. Nakamura, Appl. Phys. Lett. 89, 133504 (2006). APPLAB 0003-6951 10.1063/1.2357850