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Volumn 64, Issue 21, 2001, Pages

Local impurity-assisted conductance in magnetic tunnel junctions

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ARTICLE; CALCULATION; CONDUCTANCE; ELECTRONICS; MAGNETISM; MATERIALS; MATHEMATICAL ANALYSIS; MODEL;

EID: 0035578289     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.212401     Document Type: Article
Times cited : (26)

References (21)
  • 19
    • 85038280852 scopus 로고    scopus 로고
    • this calculation we assume that the localized state lies close to the Fermi energy that allows observing a sizable effect at a small STM voltage. In real systems one can expect the presence of impurity/defects levels at various energies within the band gap, which could be sensed by varying the voltage. The effect of the STM voltage is discussed by D. Kehrakos, E. Y. Tsymbal, and D. G. Pettifor, J. Magn. Magn. Mater. (to be published)
    • In this calculation we assume that the localized state lies close to the Fermi energy that allows observing a sizable effect at a small STM voltage. In real systems one can expect the presence of impurity/defects levels at various energies within the band gap, which could be sensed by varying the voltage. The effect of the STM voltage is discussed by D. Kehrakos, E. Y. Tsymbal, and D. G. Pettifor, J. Magn. Magn. Mater. (to be published).
  • 20


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.