Defect-mediated properties of magnetic tunnel junctions

IEEE Transactions on Magnetics

Volumn 43, Issue 6, 2007, Pages 2770-2775

  Velev, J P ^a   Zhuravlev, M Ye ^a   Belashchenko, K D ^a   Jaswal, S S ^a   Tsymbal, E Y ^a   Katayama, T ^b   Yuasa, S ^b  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Heterostructures; Magnetic coupling; Magnetic memories; Magnetic recording

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTANCE; EXCHANGE COUPLING; HETEROJUNCTIONS; MAGNETIC COUPLINGS; MAGNETIC RECORDING; MAGNETORESISTANCE; RESONANT TUNNELING;

INTERLAYER EXCHANGE COUPLING (IEC); MAGNETIC MEMORIES; MAGNETIC TUNNEL JUNCTIONS; TUNNELING MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 34249021709     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2007.893311     Document Type: Article

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