Photoemission study of the iron-induced chemical reduction of silicon native oxide

Surface Science

Volumn 536, Issue 1-3, 2003, Pages 130-138

  Garnier, M G ^a,b   De los Arcos, T ^a   Boudaden, J ^a   Oelhafen, P ^a  

^a UNIVERSITY OF BASEL   (Switzerland)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

Evaporation and sublimation; Iron; Metal oxide semiconductor (MOS) structures; Photoelectron spectroscopy; Silicon; Silicon oxides

Indexed keywords

EVAPORATION; KINETIC ENERGY; OXIDATION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; REDUCTION; SILICON WAFERS; SUBLIMATION;

OXIDE LAYERS;

MOS DEVICES;

EID: 0038445504     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00581-8     Document Type: Article

References (29)

1. Brillson L.J. Surf. Sci. Rep. 2:1982;123.
2. Braicovich L. King D.A., Woodruff D.P. The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis. vol. 5:1988;235 Elsevier Science Publishers, Amsterdam.
3. Öfner H., Netzer F.P., Matthew J.A.D. J. Phys.: Condens. Matter. 4:1992;9795.
4. Hofmann R., Henle W.A., Öfner H., Ramsey M.G., Netzer F.P., Braun W., Horn K. Phys. Rev. B. 47:1993;10407.
5. Pretorius R., Harris J.M., Nicolet M.-A. Solid State Electron. 21:1978;667.
6. Li W.Z., Xie S.S., Qian L.X., Chang B.H., Zou B.S., Zhou W.Y., Zhao R.A., Wang G. Science. 274:1996;1701.
7. Fan S., Chapline M.G., Franklin N.R., Tombler T.W., Cassell A.M., Dai H. Science. 283:1999;512.
8. Sohn J.I., Choi C.-J., Lee S., Seong T.-Y. Appl. Phys. Lett. 78:2001;3130.
9. de los Arcos T., Vonau F., Garnier M.G., Thommen V., Boyen H.-G., Oelhafen P., Düggelin M., Mathis D., Guggenheim R. Appl. Phys. Lett. 80:2002;2383.
10. Brown I.G. Rev. Sci. Instrum. 65:1994;3061.
11. Xu S., Tay B.K., Tan H.S., Zhong L., Tu Y.Q., Silva S.R.P., Milne W.I. J. Appl. Phys. 79:1996;7234.
12. Yushkov G.Y., Anders A., Oks E.M., Brown I.G. J. Appl. Phys. 88:2000;5618.
13. I.G. Brown, private communication.
14. http://www.uni-leipzig.de/ unifit/.
15. SRIM, the Stopping and Range of Ions and Matter software is downloadable at .
16. Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff J.A., Hollinger G. Phys. Rev. B. 38:1988;6084.
17. Kobayashi H., Kubota T., Kawa H., Nakato Y., Nishiyama M. Appl. Phys. Lett. 73:1998;933.
18. Browning R., Sobolewski M.A., Helms C.R. Phys. Rev. B. 38:1988;13407.
19. Dreiner S., Schürmann M., Westphal C., Zacharias H. Phys. Rev. Lett. 86:2001;4068.
20. Öfner H., Hofmann R., Kraft J., Netzer F.P., Paggel J.J., Horn K. Phys. Rev. B. 50:1994;15120.
21. Zhang K.Z., Litz K.E., Banaszak Holl M.M., McFeely F.R. Appl. Phys. Lett. 72:1998;46.
22. Li X.D., Zeng L.Z. Phys. Stat. Sol. 121:1990;K185.
23. Luches P., Liberati M., Valeri S. Surf. Sci. 532-535:2003;409.
24. Regan T.J., Ohldag H., Stamm C., Nolting F., Lüning J., Stöhr J., White R.L. Phys. Rev. B. 64:2001;214422.
25. Rabalais J.W., Al-Bayati A.H., Boyd K.J., Marton D., Kulik J., Zhang Z., Chu W.K. Phys. Rev. B. 53:1996;10781.
26. Degroote B., Vantomme A., Pattyn H., Vanormelingen K. Phys. Rev. B. 65:2002;195401.
27. Ditchfield R., Seebauer E.G. Phys. Rev. Lett. 82:1999;1185.
28. Teraoka Y., Yoshigoe A. Surf. Sci. 507-510:2002;797.
29. Aversa L., Verucchi R., Ciullo G., Ferrari L., Moras P., Pedio M., Pesci A., Iannotta S. Appl. Surf. Sci. 184:2001;350.