Investigations of dopants introduction in hafnia: Electronic properties, diffusion, and their role on the gate leakage current

Journal of Applied Physics

Volumn 104, Issue 3, 2008, Pages

  Cuny, Vaĺrie ^a   Richard, Nicolas ^a  

^a CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; FLUORINE; HAFNIUM; LEAKAGE (FLUID); LEAKAGE CURRENTS; MOS CAPACITORS; NITROGEN; NONMETALS; OXYGEN; PROBABILITY DENSITY FUNCTION; VACANCIES;

BAND GAPS; CHARGE STATES; ELECTRON AFFINITIES; FIRST-PRINCIPLES SIMULATIONS; FORMATION ENERGIES; GATE-LEAKAGE CURRENTS; HAFNIUM DIOXIDE; IONIZATION ENERGIES; NITROGEN ATOMS; NITROGEN INCORPORATION; OXYGEN-VACANCY;

OXYGEN VACANCIES;

EID: 49749083504     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2965193     Document Type: Article

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