Positive bias temperature instability effects of Hf-based nMOSFETs with various nitrogen and silicon profiles

IEEE Electron Device Letters

Volumn 26, Issue 1, 2005, Pages 32-34

  Choi, Changhwan ^a   Kang, Chang Seok ^a   Kang, Chang Yong ^a   Rhee, Se Jong ^a   Akbar, Mohammad Shahariar ^a   Krishnan, Siddarth A ^a   Zhang, Manhong ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Charge pumping current; Charge trapping characteristics; Nitrogen incorporated hafnium oxide; Positive bias temperature instability (PBTI)

Indexed keywords

COMPOSITION EFFECTS; DEGRADATION; DIELECTRIC DEVICES; DIFFUSION; ELECTRIC CURRENTS; ELECTRON TRAPS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; NITROGEN; SEMICONDUCTING SILICON; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

CHARGE PUMPING CURRENT; CHARGE TRAPPING CHARACTERISTICS; HAFNIUM OXYNITRIDE; NITROGEN INCORPORATED HAFNIUM OXIDE; POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI) EFFECTS; SILICON LAYER;

MOSFET DEVICES;

EID: 12444296542     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.840717     Document Type: Article

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