Effects of plasma immersion ion nitridation on dielectric properties of Hf O2

Applied Physics Letters

Volumn 90, Issue 12, 2007, Pages

  Wang, L ^a   Xue, K ^a   Xu, J B ^a   Huang, A P ^b   Chu, Paul K ^b  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; PLASMA SOURCES; THERMODYNAMIC STABILITY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM COMPOSITION; INTERFACIAL MICROSTRUCTURE; OXIDE THICKNESS; PLASMA IMMERSION ION NITRIDATION;

NITRIDATION;

EID: 33947588098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2715044     Document Type: Article

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