Role of nitrogen incorporation into Hf-based high-& gate dielectrics for termination of local current leakage paths

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 42-45, 2005, Pages

  Watanabe, Heiji ^a   Kamiyama, Satoshi ^b   Umezawa, Naoto ^c   Shiraishi, Kenji ^d   Yoshida, Shiniti ^a   Watanabe, Yasumasa ^a   Arikado, Tsunetoshi ^b   Chikyow, Toyohiro ^c   Yamada, Keisaku ^e   Yasutake, Kiyoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e WASEDA UNIVERSITY   (Japan)

Author keywords

Conductive atomic force microscopy; Crystallization; Current leakage path; Dielectric breakdown; First principles calculations; Grain boundary; High k gate dielectrics; Nitridation; Oxygen vacancy; Reliability

Indexed keywords

ATOMIC FORCE MICROSCOPY; GRAIN BOUNDARIES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NITROGEN; OXYGEN; RELIABILITY;

CURRENT LEAKAGE PATH; DIELECTRIC BREAKDOWN; HIGH-K GATE DIELECTRICS; OXYGEN VACANCY;

DIELECTRIC MATERIALS;

EID: 30344443976     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1333     Document Type: Article

References (12)

1. G. D. Wilk, R. M. Wallace and J. M. Anthony: J. Appl. Phys. 89 (2001) 5243.
2. A. I. Kingon, J.-P. Maria, D. Wicaksana and C. Hoffman: Ext. Abstr. Int. Workshop on Gate Insulator, 2001, p. 36.
3. M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi and A. Nishiyama: IEDM Tech. Dig., 2002, p. 849.
4. C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, M. Niwa and D. L. Kwong: IEDM Tech. Dig., 2002, p. 857.
5. M. Saitoh, M. Terai, T. Iwamoto, T. Tatsumi, N. Ikarashi, T. Ogura, H. Watanabe, H. Watanabe, A. Morioka, S. Fujieda and K. Watanabe: Jpn. J. Appl. Phys. 44 (2005) 2330.
6. R. Degraeve, G. Groeseneken, R. Bellens, M. Depas and H. E. Maes: IEDM Tech. Dig., 1995, p. 863.
7. H. Watanabe, K. Fujita and M. Ichikawa: Appl. Phys. Lett. 72 (1998) 1987.
8. S. Kamiyama, T. Miura, T. Aoyama, H. Kitajima and T. Arikado: Ext. Abstr. Int. Conf. Solid State Devices and Materials, 2004, p. 754.
9. S. Kamiyama, T. Miura and Y. Nara: Appl. Phys. Lett. 86 (2005) 222904.
10. R. M. Fleming, D. V. Lang, C. D. W. Jones, M. L. Steigerwald, D. W. Murphy, G. B. Alers, Y.-H. Wong, R. B. van Dover, J. R. Kwo and A. M. Sergent: J. Appl. Phys. 88 (2000) 850.
11. K. Torii, A. Aoyama, S. Kamiyama, Y. Tamura, S. Miyazaki, H. Kitajima and T. Arikado: Tech. Dig. Symp. VLSI Technology, 2004, p. 112.
12. N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima and T. Arikado: Appl. Phys. Lett. 86 (2005) 143507.