Comparative study of passivation mechanism of oxygen vacancy with fluorine in Hf O2 and HfSi O4

Applied Physics Letters

Volumn 90, Issue 14, 2007, Pages

  Sun, Qing Qing ^a   Chen, Wei ^a   Ding, Shi Jin ^a   Xu, Min ^a   Lu, Hong Liang ^a   Lindh Rengifo, Hans Cristian ^a   Zhang, David Wei ^a   Wang, Li Kang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE; GATE DIELECTRICS; LEAKAGE CURRENTS; PASSIVATION; TRANSISTORS;

GAP STATES; HIGH PERMITTIVITY GATE DIELECTRICS;

OXYGEN VACANCIES;

EID: 34047264993     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2719177     Document Type: Article

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