Effects of CH2F2 and H2 flow rates on process window for infinite etch selectivity of silicon nitride to ArF PR in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas

Microelectronic Engineering

Volumn 85, Issue 2, 2008, Pages 375-387

  Park, C K ^a   Kim, H T ^a   Lee, C H ^a   Lee, N E ^a   Mok, Hyungsoo ^b  

^a Sungkyunkwan University   (South Korea)

^b Konkuk University   (South Korea)

Author keywords

ArF photoresist; Dual frequency capacitively coupled plasma; Etch selectivity; Plasma etching; Silicon nitride (Si3N4)

Indexed keywords

NITRIDES; NONMETALS; SILICON NITRIDE;

ETCH SELECTIVITIES; PROCESS WINDOWS;

SILICON;

EID: 47249126139     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.07.012     Document Type: Article

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