Temporal velocity distribution of positive and negative ions incident on a wafer in a pulsed two-frequency capacitively coupled plasma in CF 4/Ar for SiO2 etching

IEEE Transactions on Plasma Science

Volumn 31, Issue 4 II, 2003, Pages 521-527

  Yagisawa, Takashi ^a   Makabe, Toshiaki ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

CF4 Ar; Ion velocity distribution (IVD); Pulsed two frequency capacitively coupled plasmas (2f CCP); SiO2 etching; Very high frequency (VHF) (100 MHz) LF(1 MHz) plasma; VicAddress

Indexed keywords

ANISOTROPY; COMPUTATIONAL COMPLEXITY; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTROCHEMICAL ELECTRODES; MONTE CARLO METHODS; NEGATIVE IONS; PLASMA ETCHING; POSITIVE IONS; ULSI CIRCUITS;

PROBE TECHNIQUES;

PLASMA APPLICATIONS;

EID: 0042929630     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2003.815491     Document Type: Article

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