Investigation of surface modifications of 193 and 248 nm photoresist materials during low-pressure plasma etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 2594-2603

  Ling, L ^a   Hua, X ^a,d   Li, X ^a   Oehrlein, G S ^a   Hudson, E A ^b   Lazzeri, P ^c   Anderle, M ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b LAM RESEARCH CORPORATION   (United States)

^c ITC IRST   (Italy)

^d Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC ETCHING; ION ENERGY; PLASMA GENERATION; TRANSFORMER COUPLED PLASMA (TCP);

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELLIPSOMETRY; MASS SPECTROMETRY; PHOTOLITHOGRAPHY; PHOTORESISTS; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS; SURFACE TREATMENT;

PLASMA ETCHING;

EID: 13244267447     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1805545     Document Type: Article

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