Prediction of a radial variation of plasma structure and ion distributions in the wafer interface in two-frequency capacitively coupled plasma

IEEE Transactions on Plasma Science

Volumn 32, Issue 1 I, 2004, Pages 90-100

  Yagisawa, Takashi ^a   Maeshige, Kazunobu ^a   Shimada, Takashi ^a   Makabe, Toshiaki ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Ion angular distribution (IAD); Ion energy distribution (IED); Negative ion injection; Radial variation; SiO2 etching; Two frequency capacitively coupled plasmas (2f CCP); VicAddress

Indexed keywords

ETCHING; FREQUENCIES; ION BOMBARDMENT; PRESSURE EFFECTS; SILICA;

RADIAL VARIATION; TWO FREQUENCY CAPACITIVELY COUPLED PLASMA;

INDUCTIVELY COUPLED PLASMA;

EID: 2442466740     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2004.823968     Document Type: Article

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