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Volumn 39, Issue 4, 2006, Pages 673-684

SiO2 and Si3N4 etch mechanisms in NF 3/hydrocarbon plasma

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GLOBAL WARMING; HYDROCARBONS; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 32144442910     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/4/013     Document Type: Article
Times cited : (18)

References (24)
  • 5
    • 0034187093 scopus 로고    scopus 로고
    • New C-F interatomic potential for molecular dynamics simulation of fluorocarbon film formation
    • Tanaka J, Abrams C and Graves D B 2000 New C-F interatomic potential for molecular dynamics simulation of fluorocarbon film formation J. Vac. Sci. Technol. A 18 938-45
    • (2000) J. Vac. Sci. Technol. , vol.18 , Issue.3 , pp. 938-945
    • Tanaka, J.1    Abrams, C.2    Graves, D.B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.