Hot-electron-stress degradation in unpassivated gan/algan/gan HEMTs on Sic

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 415-422

  Meneghesso, G ^a   Pierobon, R ^a   Rampazzo, F ^a   Tamiazzo, G ^a   Zanoni, E ^a   Bernat, J ^b   Kordos, P ^b   Basile, A F ^c   Chini, A ^c   Verzellesi, G ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; GATE CONTACT; GATE-LAG DISPERSION; HOT-ELECTRON-STRESS DEGRADATION;

ELECTROLUMINESCENCE; ELECTRONS; HOT CARRIERS; LEAKAGE CURRENTS; SILICON CARBIDE; STRESS CONCENTRATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 28744447128     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (26)

1. Y.-F. Wu, A. Saxler, M. Moore, R.P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U.K. Mishra, P. Parikh, "30-W/mm GaN HEMTs by field plate optimization", IEEE Electron Dev. Lett., Vol. 25, (3), 2004 pp.117-119.
2. x passivation and UV illumination", IEEE Trans Electron Devices, Vol. 50, (4), 2003 pp.886-893.
3. E. Zanoni, A. Paccagnella, P. Pisoni, P. Telaroli, C. Tedesco, C. Canali, N. Testa, M. Manfredi, "Impact ionization, recombination and visible light emission in AlGaAs/GaAs high electron mobility transistors", J. Appl. Phys., 70, (1), 1991, pp.529-531.
4. G. Meneghesso, A. Paccagnella, Y. Haddab, C. Canali, E. Zanoni "Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors", Appl. Phys. Lett., 69 (10) 1996 pp 1411-1413.
5. 0.75As/GaAs power HFET's under off-state and on-state electrical stress conditions", IEEE Trans. Electron Devices, vol. 47, n.2 2000 pp.261-268.
6. D. Dieci, G. Sozzi, R. Menozzi, E. Tediosi, C. Lanzieri, C. Canali "Electric-field-related reliability of AlGaAs/GaAs Power HFETs: Bias dependence and correlation with breakdown", IEEE Trans. Electron Devices, vol.48, n.9, 2001 pp. 1929-1937.
7. G. Meneghesso, C. Canali, P. Cova, E. De Bortoli, E. Zanoni "Trapped charge modulation: A new cause of Instability in AlGaAs/InGaAs Pseudomorphic HEMTs", IEEE Electron Device Lett., vol. 17N.5 1996pp.232-234.
8. G. Meneghesso, A. Mion, Y. Haddab, M. Pavesi, M. Manfredi, C. Canali, E. Zanoni "Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing", J. Appl. Phys. 82 (11), 1997pp.5547-5554.
9. G. Meneghesso, E. De Bortoli, D. Sala, E. Zanoni, "Failure mechanisms of AlGaAs/InGaAs pseudomorphic HEMTs: Effects due to hot electrons and modulation trapped charge", Microel Reliab. Vol.37, N.7 1997 pp.1121-1129.
10. R. Menozzi, M. Borgarino, Y. Bueyens, K. Van der Zanden, M. Van Have, F. Fantini "The effect of passivation on the hot electron degradation of lattice matched InAlAs/InGaAs/InP HEMTs", in Proceedings of the International Indium Phosphide and Related Materials conference, 1997 pp.xii-680.
11. F. Rampazzo, R. Pierobon, D. Facetta, C. Gaquiere, D. Theron, B. Boudait, G. Meneghesso, E. Zanoni "Hot carrier aging degradation phenomena in GaN based MESFETs", Microel. Reliab., 44 (2004)pp. 1375-1380.
12. J.A. Mittereder, S.C. Binari, J.A. Roussos, D.S. Katzer, D.F. Storm, D.D. Koleske, A.E. Wickenden, R.L. Henry "Current collapse induced in AlGaN/GaN HEMTs by short-term DC bias stress", in Proceedings of the International Reliability Physics Symposium, 2003, pp.320-323.
13. T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa, "A study on current collapse in AlGaN/GaN HEMTs induced by bias stress", in IEEE Trans. Electron Devices, vol.50 n.10, 2003, pp. 2015-2020.
14. th International Reliability Physics Symposium, 2001, pp.214.
15. G. Koley, H. Kim, L.F. Eastman, M.G. Spencer, "Electrical bias stress related degradation of AlGaN/GaN HEMTs", in Electronics Lett. Vol.39, N.16, 2003.
16. H. Kim, A. Vertiatchikh, R.M. Thompson, V. Tilak, T.R. Prunty, J.R. Shealy, L.F. Eastman, "Hot Electron induced degradation of undoped AlGaN/GaN HFETs", Microel. Reliab., 43, 2003,pp. 823-827.
17. H. Kim, R. M. Thompson, V. Tilak, T.R. Prunty, J.R. Shealy, L.F. Eastman, "Effects of SiN passivation and high -electric field on AlGaN-GaN HFET degradation", IEEE Electron Device Lett., Vol.24, n.7, 2003, pp.421-423.
18. D.K. Sahoo, R.K. Lal, H. Kim, V. Tilak, L.F. Eastman "High-field effects in Silicon Nitride Passivated GaN MODFETs", IEEE Trans, on Electron Devices, Vol.50, N.5, 2003, pp.1163-1170.
19. J. Bernat, M. Wolter, A. Fox, M. Marso, J. Flynn, G. Brandes, P. Kordos, "Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs", Electronics Lett., Vol.40, 1, 2004, pp78-80.
20. O. Mitrofanov, M. Manfra, N. Weimann., "Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy", Appl. Phys. Lett., 82, (24), 2003, pp.4361-4363.
21. A.G. Chynoweth, "Ionization rates for electrons and holes in silicon", Phys. Rev., 109, 1958, pp. 1537-1540.
22. K. Hui, C.Hu, P. George, and P.Ko, "Impact ionization in GaAs MESFETs", IEEE Electron Device Lett., 11, 1990, pp.113-115.
23. T. Nakao, Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa, T. Mizutani "Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage", Jpn. J. Appl. Phys., 41, (1), 2002, pp.1990-1991.
24. N. Shigekawa, K. Shiojima, T. Suemitsu "Electroluminescence characterization of AlGaN/GaN high-electron mobility transistors", Appl. Phys. Lett., 72, (8), 2001, pp. 1196-1198.
25. N. Shigekawa, K. Shiojima, T. Suemitsu "Optical Study of high-biased AlGaN/GaN high-electron-mobility-transistors", J. Appl. Phys., 92, (1), 2002, pp.531-535.
26. F.C. Hsu, H.R. Grinolds "Structure-Enhanced MOSFET Degradation due to hot electron injection", IEEE Electron Device Lett., vol. 8, N.3, 2004, pp.71-74.