Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects

Microelectronics Reliability

Volumn 48, Issue 1, 2008, Pages 45-50

  Heller, E R ^a,b   Crespo, A ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISSIPATION; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; SUBSTRATES; THREE DIMENSIONAL;

ELECTRO THERMAL MODELING; SUBSTRATE THICKNESS; THERMAL SUBSTRATE EFFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 39149099508     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.090     Document Type: Article

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