Spike annealing of shallow arsenic and phosphorus implants in different gaseous ambient

AIP Conference Proceedings

Volumn 866, Issue , 2006, Pages 109-112

  Paul, S ^a   Lerch, W ^a   Bolze, D ^b  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b IHP   (Germany)

Author keywords

Arsenic; Diffusion; Dopant loss; Ms anneal; Phosphorus; RTP; Silicon self interstitials; Spike anneal; Vacancies

Indexed keywords

EID: 33846990452     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2401473     Document Type: Conference Paper

References (5)

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5. D. F. Downey, J. W. Chow, W. Lerch, J. Niess, S. D. Marcus, Mat, Res. Soc. Proc. 525, 263-271 (1998)