Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles

Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4166-4168

  Aboy, Maria ^a   Pelaz, Lourdes ^a   Marqués, Luis A ^a   Barbolla, Juan ^a   Mokhberi, Ali ^b   Takamura, Yayoi ^b   Griffin, Peter B ^b   Plummer, James D ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; COMPUTER SIMULATION; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DISSOLUTION; ION IMPLANTATION; LASER APPLICATIONS; LIQUID PHASE EPITAXY; MATHEMATICAL MODELS; MONTE CARLO METHODS; REACTION KINETICS;

ATOMISTIC SIMULATION; SOLID PHASE EPITAXIAL REGROWTH;

SEMICONDUCTING BORON;

EID: 0346780497     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1628391     Document Type: Article

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