Low resistivity bcc-Ta/TaNx metal gate MNSFETs having plane gate structure featuring fully low-temperature processing below 450°C

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 67-68

  Shimada, H ^a   Ohshima, I ^a   Nakao, S I ^a   Nakagawa, M ^a   Kanemoto, K ^a   Hirayama, M ^a   Sugawa, S ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; LOW TEMPERATURE EFFECTS; SILICON NITRIDE; TANTALUM COMPOUNDS;

FULLY-DEPLETED SILICON-ON-DIELECTRIC (FDSOI) METAL GATES; METAL-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MNSFET) GATES; SOLID PHASE EPITAXY (SPE);

GATES (TRANSISTOR);

EID: 0034790450     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)